Central Semiconductor CorpUnited States
JFET P-CH 30V TO18
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 900 µA @ 5 V |
| Power - Max | 300 mW |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 µA |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Package | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Other | |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Series | - |
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DatasheetDatasheet · 368.6 KB · 2026-09-22DatasheetDatasheet · 305.8 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 4.4 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 3.2 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.9 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.7 MB · 2026-09-22OtherOther · 491.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 467.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22PCN & ErrataPCN & Errata · 228.2 KB · 2026-09-22EnvironmentalEnvironmental · 172.4 KB · 2026-09-22EnvironmentalEnvironmental · 106.6 KB · 2026-09-22
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