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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage80 V
Collector current1 AMax
DC current gain100150mA
Power800 mWMax
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max800 mW
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
PackageTube
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
Base Product Number2N30
MfrSTMicroelectronics
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA

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