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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage150 V
Collector current300 mAMax
DC current gain100150mA
Power500 mWMax
Power
Current - Collector Cutoff (Max)10µA (ICBO)
Current - Collector (Ic) (Max)300 mA
Power - Max500 mW
Voltage - Collector Emitter Breakdown (Max)150 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Environment and package
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
PackageBulk
Package / Case3-SMD, No Lead
QualificationMIL-PRF-19500/366
Supplier Device PackageUB
Other
Base Product Number2N3501
MfrMicrochip Technology
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA

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