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Technical parameters

Key specs

TypePNP
Collector-emitter voltage12 V
DC current gain3010mA
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Voltage - Collector Emitter Breakdown (Max)12 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 300mV
Frequency - Transition500MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
PackageBulk
Package / CaseTO-106-3 Domed
Supplier Device PackageTO-106
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic-

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