Fairchild SemiconductorUnited States
SMALL SIGNAL BIPOLAR TRANSISTOR
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 50mA |
| Power - Max | 350mW |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V |
| Frequency - Transition | 2.1GHz |
| Gain | 1.5dB |
| Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Other | |
| Mfr | Fairchild Semiconductor |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN |