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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage80 V
Collector current5 AMax
DC current gain401A
Power2 WMax
Power
Current - Collector Cutoff (Max)20µA
Current - Collector (Ic) (Max)5 A
Power - Max2 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A, 2V
Frequency - Transition-
Environment and package
Mounting TypeStud Mount
Operating Temperature-65°C ~ 200°C (TJ)
PackageBulk
Package / CaseTO-111-4, Stud
Supplier Device PackageTO-111
Other
MfrMicrochip Technology
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 5A

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