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Technical parameters

Power
Current - Collector Cutoff (Max)10µA (ICBO)
Current - Collector (Ic) (Max)50mA
Power - Max350mW
Voltage - Collector Emitter Breakdown (Max)60V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
PackageBulk
Package / CaseTO-78-6 Metal Can
Supplier Device PackageTO-78-6
Other
Base Product Number2N3811
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor Type2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA

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