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Technical parameters

Key specs

TypePNP
Collector-emitter voltage40 V
Collector current200 mAMax
DC current gain10010mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)-
Current - Collector (Ic) (Max)200 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition250MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
Base Product Number2N39
MfrSTMicroelectronics
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA

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