全部替代型号
查看完整报告技术参数
类型PNP
集射极耐压40 V
集电极电流200 mA最大
放大倍数 hFE10010mA
功率625 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 200 mA |
| Power - Max | 625 mW |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Cut Tape (CT) Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| 其他 | |
| Base Product Number | 2N3906 |
| Mfr | onsemi |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |