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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage70 V
Collector current10 AMax
DC current gain501A
Power1 WMax
Power
Current - Collector Cutoff (Max)10µA
Current - Collector (Ic) (Max)10 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)70 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 1A, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
PackageBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
Base Product Number2N4150
MfrMicrochip Technology
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2.5V @ 1A, 10A

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