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Technical parameters

Key specs

TypePNP
Collector-emitter voltage40 V
DC current gain25010mA
Power200 mWMax
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Power - Max200 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 10mA, 5V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-106-3 Domed
Supplier Device PackageTO-106
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA

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