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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)5 mA @ 20 V
Power - Max1.8 W
Voltage - Breakdown (V(BR)GSS)40 V
Voltage - Cutoff (VGS off) @ Id500 mV @ 1 nA
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 125°C (TJ)
PackageBulk
Package / Case-
Supplier Device PackageTO-18
Other
Base Product Number2N4393
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds14pF @ 20V
MfrMicrochip Technology
Product StatusActive
Resistance - RDS(On)100 Ohms
Series-

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