Microchip TechnologyUnited States
POWER BJT
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage500 V
Collector current200 mAMax
DC current gain3025mA
Power1 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| Current - Collector (Ic) (Max) | 200 mA |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package | Bulk |
| Package / Case | 3-SMD, No Lead |
| Supplier Device Package | U4 |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 5mA, 25mA |
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