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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)5 mA @ 15 V
Power - Max500 mW
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id1 V @ 1 nA
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
PackageBox
Package / CaseTO-206AA, TO-18-3 Metal Can
Supplier Device PackageTO-18
Other
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds25pF @ 15V
MfrCentral Semiconductor Corp
Product StatusActive
Resistance - RDS(On)150 Ohms
Series-

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