2N5191
Central Semiconductor CorpUnited States

2N5191

ObsoleteSingle Bipolar TransistorsTO-126

TRANS NPN 60V 4A TO126

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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage60 V
Collector current4 AMax
DC current gain251.5A
Power40 WMax
Power
Current - Collector Cutoff (Max)1mA
Current - Collector (Ic) (Max)4 A
Power - Max40 W
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1.5A, 2V
Frequency - Transition2MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A

Documents

DatasheetDatasheet · 949.4 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 2.4 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 2.1 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.7 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 731.1 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 419.9 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 345.1 KB · 2026-09-22EnvironmentalEnvironmental · 256.7 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22EnvironmentalEnvironmental · 105.1 KB · 2026-09-22PCN & ErrataPCN & Errata · 77.4 KB · 2026-09-22
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