All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage50 V
Collector current50 mAMax
DC current gain25010mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)50 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 10mA, 5V
Frequency - Transition30MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
MfrFairchild Semiconductor
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700mV @ 1mA, 10mA

Documents

No documents are linked to this part yet.