onsemiUnited States
2N5210 - SMALL SIGNAL BIPOLAR TR
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage50 V
Collector current100 mAMax
DC current gain200100μA
Power625 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 625 mW |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100µA, 5V |
| Frequency - Transition | 30MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Other | |
| Mfr | onsemi |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 1mA, 10mA |
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