onsemiUnited States

2N5307

ObsoleteSingle Bipolar TransistorsTO-92-3

TRANS NPN DARL 40V 1.2A TO92-3

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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage40 V
Collector current1.2 AMax
DC current gain20002mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)1.2 A
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2mA, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
Base Product Number2N5307
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.4V @ 200µA, 200mA

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