2N5339
Central Semiconductor CorpUnited States

2N5339

ObsoleteSingle Bipolar TransistorsTO-39

TRANS NPN 100V 5A TO39

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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current5 AMax
DC current gain602A
Power6 WMax
Power
Current - Collector Cutoff (Max)100µA
Current - Collector (Ic) (Max)5 A
Power - Max6 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 2V
Frequency - Transition30MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
PackageBox
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2V @ 500mA, 5A

Documents

DatasheetDatasheet · 728.6 KB · 2026-09-21DatasheetDatasheet · 728.6 KB · 2026-09-21Quality & ReliabilityQuality & Reliability · 4.4 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 3.2 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.9 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.7 MB · 2026-09-22OtherOther · 491.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 297.5 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22EnvironmentalEnvironmental · 170.3 KB · 2026-09-22EnvironmentalEnvironmental · 106.0 KB · 2026-09-22PCN & ErrataPCN & Errata · 78.3 KB · 2026-09-22
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