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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage140 V
Collector current600 mAMax
DC current gain6010mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)600 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)140 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Frequency - Transition300MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device PackageTO-92 (TO-226)
Other
Base Product Number2N5550
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA

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