Microchip TechnologyUnited States
POWER BJT
All alternatives
View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage120 V
Collector current30 AMax
Power150 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 30 A |
| Power - Max | 150 W |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Stud Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Supplier Device Package | TO-63 |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | - |
Documents
No documents are linked to this part yet.