Microchip TechnologyUnited States
POWER BJT
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage100 V
Collector current40 AMax
Power220 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 40 A |
| Power - Max | 220 W |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Stud Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Supplier Device Package | TO-63 |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | - |
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