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Technical parameters

Key specs

TypePNP
Collector-emitter voltage300 V
Collector current2 AMax
DC current gain101A
Power35 WMax
Power
Current - Collector Cutoff (Max)5mA
Current - Collector (Ic) (Max)2 A
Power - Max35 W
Voltage - Collector Emitter Breakdown (Max)300 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 1A, 3.2V
Frequency - Transition20MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
PackageTube
Package / CaseTO-213AA, TO-66-2
Supplier Device PackageTO-66
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6V @ 125mA, 1A

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