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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage350 V
Collector current500 mAMax
DC current gain2050mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)350 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Frequency - Transition200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92 (TO-226)
Other
Base Product Number2N6517
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA

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