Microchip TechnologyUnited States
POWER BJT
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage300 V
Collector current10 AMax
Power100 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 10 A |
| Power - Max | 100 W |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Stud Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Supplier Device Package | TO-61 |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | - |
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