Microchip TechnologyUnited States
POWER BJT
All alternatives
View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage300 V
Collector current15 AMax
DC current gain151A
Power3 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100µA |
| Current - Collector (Ic) (Max) | 15 A |
| Power - Max | 3 W |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 3V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Stud Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Supplier Device Package | TO-61 |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 3A, 15A |
Documents
No documents are linked to this part yet.