2N7000

在产单 FET,MOSFETTO-92

MOSFET TO-92 60V 0.2A

沟道N 沟道
耐压60 V
连续漏极电流200 mA
导通电阻5 Ω

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压60 V
连续漏极电流200 mA
导通电阻5 Ω最大 · 500mA
阈值电压3 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)350mW (Ta)
环境与封装
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92
其他
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V
MfrDiotec Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

技术资料