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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current315 mA
On-resistance1.6 ΩMax · 500mA
Gate threshold voltage2.4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C315mA (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Power Dissipation (Max)260mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds30 pF @ 10 V
MfrDiotec Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

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