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Technical parameters

Key specs

TypePNP
Collector-emitter voltage50 V
Collector current5 AMax
DC current gain1001A
Power2 WMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)5 A
Power - Max2 W
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1V
Frequency - Transition60MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS
Other
Base Product Number2SA1931
MfrToshiba Semiconductor and Storage
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400mV @ 200mA, 2A

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