All alternatives

View full report

Technical parameters

Key specs

TypePNP
Collector-emitter voltage50 V
Collector current2 AMax
DC current gain200100mA
Power1 WMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)2 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Frequency - Transition420MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device Package3-MP
Other
Mfronsemi
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 1A

Documents

No documents are linked to this part yet.