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Technical parameters

Key specs

TypePNP
Collector-emitter voltage50 V
Collector current3 AMax
DC current gain140100mA
Power1 WMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)3 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 2V
Frequency - Transition150MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTP
Other
Base Product Number2SB1202
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic700mV @ 100mA, 2A

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