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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage300 V
Collector current100 mAMax
DC current gain3020mA
Power900 mWMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max900 mW
Voltage - Collector Emitter Breakdown (Max)300 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 10V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD
Other
Base Product Number2SC2482
MfrToshiba Semiconductor and Storage
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 1mA, 10mA

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