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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage300 V
Collector current100 mAMax
DC current gain3020mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)300 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 10V
Frequency - Transition80MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseSC-71
Supplier Device PackageMSTM
Other
Base Product Number2SC3672
MfrToshiba Semiconductor and Storage
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA

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