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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage15 V
Collector current200 mAMax
DC current gain10010mA
Power300 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)200 mA
Power - Max300 mW
Voltage - Collector Emitter Breakdown (Max)15 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition750MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / Case3-SSIP
Supplier Device Package3-SPA
Other
Mfronsemi
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA

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