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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage15 V
Collector current3 AMax
DC current gain800500mA
Power900 mWMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)3 A
Power - Max900 mW
Voltage - Collector Emitter Breakdown (Max)15 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce800 @ 500mA, 1V
Frequency - Transition150MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD
Other
Base Product Number2SC4682
MfrToshiba Semiconductor and Storage
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 30mA, 3A

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