Rohm SemiconductorJapan
RF TRANS NPN 11V 0.05A VMT3
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 50mA |
| Power - Max | 150mW |
| Voltage - Collector Emitter Breakdown (Max) | 11V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 10V |
| Frequency - Transition | 3.2GHz |
| Gain | - |
| Noise Figure (dB Typ @ f) | 3.5dB @ 500MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Supplier Device Package | VMT3 |
| Other | |
| Base Product Number | 2SC5662 |
| Mfr | Rohm Semiconductor |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN |