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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage40 V
Collector current50 mAMax
DC current gain6002mA
Power400 mWMax
Power
Current - Collector Cutoff (Max)1µA
Current - Collector (Ic) (Max)50 mA
Power - Max400 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce600 @ 2mA, 10V
Frequency - Transition120MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / Case3-SIP
Supplier Device PackageM-A1
Other
Base Product Number2SD119
MfrPanasonic Electronic Components
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200mV @ 1mA, 10mA

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