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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage50 V
Collector current2 AMax
DC current gain280100mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)2 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce280 @ 100mA, 2V
Frequency - Transition150MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device Package3-MP
Other
Base Product Number2SD1207
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 1A

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