Rohm SemiconductorJapan
TRANS GP BJT NPN 20V 3A 4-PIN(3+
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage20 V
Collector current3 AMax
DC current gain1802mA
Power500 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| Current - Collector (Ic) (Max) | 3 A |
| Power - Max | 500 mW |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Supplier Device Package | MPT3 |
| Other | |
| Base Product Number | 2SD1963 |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 25mA |
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