Rohm SemiconductorJapan
TRANS GP BJT NPN 50V 0.15A 3-PIN
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage50 V
Collector current150 mAMax
DC current gain120500mA
Power300 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 300nA |
| Current - Collector (Ic) (Max) | 150 mA |
| Power - Max | 300 mW |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Supplier Device Package | SPT |
| Other | |
| Base Product Number | 2SD2227 |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
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