onsemiUnited States
BIP NPN 1A 100V
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage120 V
Collector current1 AMax
DC current gain16050mA
Power1 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 50mA, 5V |
| Frequency - Transition | 130MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126 |
| Other | |
| Mfr | onsemi |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |