onsemiUnited States
NPN EPITAXIAL PLANAR SILICON TRA
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage20 V
Collector current700 mAMax
DC current gain16050mA
Power600 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| Current - Collector (Ic) (Max) | 700 mA |
| Power - Max | 600 mW |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 50mA, 2V |
| Frequency - Transition | 250MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | 3-NP |
| Other | |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
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