onsemiUnited States
MOSFET P-CH 60V 28A TO220ML
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage60 V
Continuous drain current28 A
On-resistance38 mΩMax · 14A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bag |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220ML |
| Other | |
| Base Product Number | 2SJ652 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 20 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 14A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | - |
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