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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage500 V
Continuous drain current8.3 ~ 9.5 A
On-resistance650 mΩMax · 5A
Gate threshold voltage5 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 8.3A (Tc)
Drain to Source Voltage (Vdss)500 V
Power Dissipation (Max)2W (Ta), 35W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C
PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FI(LS)
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 30 V
MfrSanyo
Product StatusObsolete
Rds On (Max) @ Id, Vgs650mOhm @ 5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

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