onsemiUnited States
MOSFET N-CH 500V 8.3A TO220FI
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage500 V
Continuous drain current8.3 A
On-resistance650 mΩMax · 5A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Tc) |
| Drain to Source Voltage (Vdss) | 500 V |
| Power Dissipation (Max) | 2W (Ta), 35W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FI(LS) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 30 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | - |