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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage400 V
Continuous drain current10.4 A
On-resistance420 mΩMax · 7.5A
Power
Current - Continuous Drain (Id) @ 25°C10.4A (Tc)
Drain to Source Voltage (Vdss)400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)2W (Ta), 35W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBag
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FI(LS)
Other
Base Product Number2SK4117
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds755 pF @ 30 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs420mOhm @ 7.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id-

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