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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage60 V
Collector current3 AMax
DC current gain1601A
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)3 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 1A, 2V
Frequency - Transition130MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92AP
Other
Base Product Number2STX
MfrSTMicroelectronics
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 150mA, 3A

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