onsemiUnited States
MOSFET N-CH 50V 100MA 3SPA
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage50 V
Continuous drain current100 mA
On-resistance7.8 ΩMax · 50mA
Gate threshold voltage1.3 VMax · 100μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Power Dissipation (Max) | 250mW (Ta) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bag |
| Package / Case | SC-72 |
| Supplier Device Package | 3-SPA |
| Other | |
| Base Product Number | 5LN01 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6.6 pF @ 10 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 7.8Ohm @ 50mA, 4V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.3V @ 100µA |
Documents
No documents are linked to this part yet.