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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage50 V
Continuous drain current70 mA
On-resistance23 ΩMax · 40mA
Power
Current - Continuous Drain (Id) @ 25°C70mA (Ta)
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Power Dissipation (Max)150mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseSC-75, SOT-416
Supplier Device PackageSMCP
Other
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7400 pF @ 10 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs23Ohm @ 40mA, 4V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id-

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