Goford SemiconductorTaiwan, China
MOSFET 30V 6.5A/5A 8SOP
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc), 5A (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Other | |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 10V, 9.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 255pF @ 15V, 520pF @ 15V |
| Mfr | Goford Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA, 2.5V @ 250µA |